REVISITING THE DEFECT PHYSICS IN CuInSe2 AND CuGaSe2

Using rst-principles self-consistent electronic structure theory, we have calculated defect formation energies and defect energy levels in CuInSe2. Contrary to previously accepted assumptions in the analysis of defects in CuInSe2 we nd that (i) it is much easier to form Cu vacancy in CuInSe2 than to form cation vacancies in II-VI's. (ii) Defect formation energies vary considerably both with the Fermi energy and the chemical potential of the atomic species, and (iii) Defect pairs such as (2VCu + InCu) have a remarkably low formation enthalpy. This explains the massive non-stoichiometry of CuInSe2 and the appearance of ordered defect compounds CuIn5Se8, CuIn3Se5, Cu2In4Se7 and Cu3In5Se9. The fact that CuInSe2 has good electrical properties despite this o -stoichiometry re ects the mutual passivation of InCu by VCu. Similar results are found for CuGaSe2, except that (iv) it is more di cult to form (2V Cu+Ga 2+ Cu) in CuGaSe2 than to from (2V Cu+In 2+ Cu) in CuInSe2, and (v) the GaCu donor levels are much deeper than the InCu donor levels. Thus, it is more di cult to dope CuGaSe2 n-type.